K3N5V1000F-DC Datasheet, Samsung Semiconductor

* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
* Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Op.

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode .

K3N5V1000F-DGC

K3N5V1000D-TC

K3N5VU1000D-TC

K3N5VU1000F-DC

K3N5VU1000F-DGC

K3N4C1000D-DC

K3N4C1000D-GC

K3N4C1000D-TC

K3N4C1000D-TE

K3N7U4000B

K3N7U4000C

K3N7V4000B

K3N7V4000C